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Proceedings Paper

Implementation of spectroscopic critical dimension (SCD) (TM) for gate CD control and stepper characterization
Author(s): John A. Allgair; David C. Benoit; Mark Drew; Robert R. Hershey; Lloyd C. Litt; Pedro P. Herrera; Umar K. Whitney; Marco Guevremont; Ady Levy; Suresh Lakkapragada
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Paper Abstract

Smaller device dimensions and tighter process control windows have created a need for CD metrology tools having higher levels of precision and accuracy. Furthermore, the need to detect and measure changes in feature profiles is becoming critical to in-line process control and stepper evaluation for sub-0.18micrometers technology. Spectroscopic CD (SCDTM) is an optical metrology technique that can address these needs. This work describes the use of a spectroscopic CD metrology tool to measure and characterize the focus and exposure windows for the process. The results include comparison to the established in-line CD-SEM, as well as a cross-section SEM. Repeatability and long-term stability data form a gate level nominal process are also presented.

Paper Details

Date Published: 22 August 2001
PDF: 10 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436771
Show Author Affiliations
John A. Allgair, Motorola (United States)
David C. Benoit, Motorola (United States)
Mark Drew, Motorola (United States)
Robert R. Hershey, Motorola (United States)
Lloyd C. Litt, Motorola (United States)
Pedro P. Herrera, KLA-Tencor Corp. (United States)
Umar K. Whitney, KLA-Tencor Corp. (United States)
Marco Guevremont, KLA-Tencor Corp. (United States)
Ady Levy, KLA-Tencor Corp. (United States)
Suresh Lakkapragada, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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