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Proceedings Paper

Initial results with a point projection microscope
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Paper Abstract

Conventional scanning electron microscopes are now close to the limit of their performance for tasks such as the metrology of sub-micron design rule devices. In order to overcome these limits we are investigating the use of in-line electron holography for device metrology. The in-line holograms are formed in a point projection microscope using ultra-low energy electrons (50-250eV) emitted from a nano-tip electron source. Holograms in the transmission mode and in the reflection mode of the microscope as well are possible. Since these in-line holograms are equivalent to out of focus micrographs acquired in a transmission electron microscope with a field emission gun we can reconstruct the original wave front by means of Fourier optics. The resolution of the point projection microscope is given by the sharpness of the emitter. We investigate the electric potential of the emitter using off-axis electron holography in a transmission electron microscope and compare the results to simulations obtained by solving the appropriate Laplace equation.

Paper Details

Date Published: 22 August 2001
PDF: 7 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436765
Show Author Affiliations
Bernhard G. Frost, Univ. of Tennessee/Knoxville and Oak Ridge National Lab. (United States)
David C. Joy, Univ. of Tennessee/Knoxville and Oak Ridge National Lab. (United States)


Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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