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Proceedings Paper

Metrology and analysis of two-dimensional SEM patterns
Author(s): Chris A. Mack; Sven Jug; Rob Jones; Prasad Apte; Scott Richard Williams; Mike Pochkowski
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Paper Abstract

A variety of techniques to characterize the lithographic quality of top-down two-dimensional patterns are described. Beginning with a top-down SEM micrograph, image processing and feature edge detection are used to extract a polygon representation of the printed pattern. Analysis on the polygon yields metrics such as corner rounding radius, feature area, and line edge roughness. Comparison of two shapes (for example, actual compared to desired, mask compared to wafer, or before etch compared to after etch) produces metrics such as overlapping area and the critical shape difference. Numerous examples of the utility of this approach will be given for SEM images of masks and wafers. The result is a set of numeric metrics of two-dimensional pattern fidelity applicable to lithographic evaluation, improvement and control.

Paper Details

Date Published: 22 August 2001
PDF: 8 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436763
Show Author Affiliations
Chris A. Mack, KLA-Tencor Corp. (United States)
Sven Jug, KLA-Tencor Corp. (United States)
Rob Jones, KLA-Tencor Corp. (United States)
Prasad Apte, KLA-Tencor Corp. (United States)
Scott Richard Williams, KLA-Tencor Corp. (United States)
Mike Pochkowski, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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