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Proceedings Paper

Investigation of full-field CD control of sub-100-nm gate features by phase-shift 248-nm lithography
Author(s): Michael Fritze; Brian Tyrrell; David K. Astolfi; Paul Davis; Bruce Wheeler; Renee D. Mallen; J. Jarmolowicz; Susan G. Cann; David Y. Chan; Peter D. Rhyins; Martin E. Mastovich; Neal T. Sullivan; Robert Brandom; Chris Carney; John E. Ferri; B. A. Blachowicz
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Paper Abstract

Achieving CD control for sub-100 nm processes will be challenging due to the low-k1 regime that optical patterning approaches will be required to work in. New challenges are expected to arise related to new lithography tools, photoresists, reticle types, and in some cases multiple exposures per layer. This work examines the intra-field CD variations for a range of sub-100 nm resist features patterned by chromeless phase-shift 248-nm lithography. One significant advantage of this patterning technique is that the resist CD's are a function of the exposure dose. This provides the ability to examine the CD variations of a range of linewidths in a single experiment without relying on reticle pattern scaling to determine the linewidth printed on the wafer. In addition to exploring CD control vs feature size, we also examine the full-field depth of focus for these features.

Paper Details

Date Published: 22 August 2001
PDF: 10 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436759
Show Author Affiliations
Michael Fritze, MIT Lincoln Lab. (United States)
Brian Tyrrell, MIT Lincoln Lab. (United States)
David K. Astolfi, MIT Lincoln Lab. (United States)
Paul Davis, MIT Lincoln Lab. (United States)
Bruce Wheeler, MIT Lincoln Lab. (United States)
Renee D. Mallen, MIT Lincoln Lab. (United States)
J. Jarmolowicz, MIT Lincoln Lab. (United States)
Susan G. Cann, MIT Lincoln Lab. (United States)
David Y. Chan, Photronics, Inc. (United States)
Peter D. Rhyins, Photronics, Inc. (United States)
Martin E. Mastovich, Schlumberger Semiconductor Solutions (United States)
Neal T. Sullivan, Schlumberger Semiconductor Solutions (United States)
Robert Brandom, Schlumberger Semiconductor Solutions (United States)
Chris Carney, Arch Chemicals, Inc. (United States)
John E. Ferri, Arch Chemicals, Inc. (United States)
B. A. Blachowicz, Arch Chemicals, Inc. (United States)


Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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