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Proceedings Paper

Mechanism of deep-UV photoresist tail on inorganic antireflective layer film
Author(s): Seung-Jae Lee; Su Geun Lee; Min Kim; Sun-Hoo Park; Jeong-Lim Nam; Sang-In Lee
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Paper Abstract

As the minimum feature size decreases down to 0.20micrometers , a minute pattern deformation can result in serious critical dimension variation. To minimize the critical dimension variation, the interaction of the positive-tone chemical amplification resist with SiOxNy type inorganic anti-reflective layer is investigated. The surface characterization of inorganic anti-reflective layer reveals that Si-NHx(x=0,1,2) and Si-N=O groups are attributed to the cause of the DUV PR footing. Based on the analyses, the technique to reduce the pattern deformation of the chemical amplification resist on inorganic anti-reflective layer is suggested.

Paper Details

Date Published: 22 August 2001
PDF: 7 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436756
Show Author Affiliations
Seung-Jae Lee, Samsung Electronics Co., Ltd. (South Korea)
Su Geun Lee, Samsung Electronics Co., Ltd. (South Korea)
Min Kim, Samsung Electronics Co., Ltd. (South Korea)
Sun-Hoo Park, Samsung Electronics Co., Ltd. (South Korea)
Jeong-Lim Nam, Samsung Electronics Co., Ltd. (South Korea)
Sang-In Lee, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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