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Proceedings Paper

Three-dimensional simulation of SEM imaging and charging
Author(s): Luca Grella; Gian Lorusso; Tim Niemi; Tzu-chin Chuang; David L. Adler
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Paper Abstract

SEM based CD control and wafer inspection has an increasingly active role in the semiconductor industry. Current design rules require a CD control with a precision in the nanometer range. In order to achieve this precision, a complete model of the image formation mechanism is desirable. For this reason we present a three-dimensional simulation of scanning electron microscope (SEM) images. The simulations include Monte Carlo electron scattering, charging in the substrate and electron ray-tracing in the column. We investigate some specific cases in CD-SEM metrology: We will describe the effect of scan orientation relative to the orientation of the imaged feature on the apparent beam width (ABW), the effect of magnification on contact imaging, and the effect of residue in resist trenches. Our results, regarding these examples, clearly indicate that a fully three-dimensional numerical simulation is needed to obtain an understanding of image formation and resolution limiting factors.

Paper Details

Date Published: 22 August 2001
PDF: 7 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436750
Show Author Affiliations
Luca Grella, KLA-Tencor Corp. (United States)
Gian Lorusso, KLA-Tencor Corp. (United States)
Tim Niemi, KLA-Tencor Corp. (United States)
Tzu-chin Chuang, KLA-Tencor Corp. (United States)
David L. Adler, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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