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Proceedings Paper

SPM characterizaton of anomalies in phase-shift mask and their effect on wafer features
Author(s): Sylvain Muckenhirn; A. Meyyappan; Kelvin Walch; Mark John Maslow; Geert Vandenberghe; Johannes van Wingerden
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Paper Abstract

As dimensions get smaller and circuits get more complex, the demand for comprehensive measurements of reticule geometries increases. 3D characterization of phase shift mask (PSM) is required to understand the quality of the transferred image. To avoid anomalies between the measurements, the structures on both mask/reticule and wafer should be measured using the same technique. The technique used should be insensitive to differences in the intrinsic characteristics of the materials (chromium on quartz, resist on conductive or non-conductive layers). Scanning probe microscopy (SPM) is ideally suited to make these characterizations on both masks/reticule and wafers. It quantitatively profiles lines and trenches in three dimensions. SPM is a nondestructive technique, allowing for the preservation of the integrity of mask and wafers. The profiles of features on a phase shift mask (PSM) are measured with SPM. Some undesirable effects such as micro loading versus structure size during quartz etch, positive slope of the quartz sidewall, and CD differential between chromium and quartz are characterized. Some of the corresponding features on the wafer are measured with SPM and the correlation between the mask anomalies and their effect on wafer features are established.

Paper Details

Date Published: 22 August 2001
PDF: 12 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436742
Show Author Affiliations
Sylvain Muckenhirn, Surface Interface Inc. (United States)
A. Meyyappan, Surface Interface Inc. (United States)
Kelvin Walch, Surface Interface Inc. (United States)
Mark John Maslow, FINLE Technologies, Inc. (United States)
Geert Vandenberghe, IMEC (Belgium)
Johannes van Wingerden, Philips Research Labs. (Netherlands)

Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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