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Proceedings Paper

Open-contact failure detection of via holes by using voltage contrast
Author(s): Hidetoshi Nishiyama; Mari Nozoe; Koji Aramaki; Osamu Watanabe; Yoshihiro Ikeda
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Paper Abstract

We used two techniques to determine the sensitivity of a scanning-electron-microscope-based wafer-inspection system in detecting open-contact failures. (1) The correlation between the contact resistance and the brightness of the voltage-contrast image as captured by the system was obtained experimentally. (2) A voltage-contrast simulation was developed and applied to derive a correlation between resistance and brightness from these results. A close agreement between the experimental results and the calculated values was obtained. We succeeded in clarifying the determinants of the sensitivity of open-contact-failure detection. The brightness, over part of its range, appears to be proportional to log(R*Ip) where R is the resistance and Ip is the irradiating electron-beam current. This relationship indicates that the sensitivity of open-contact failure detection is determined by Ip. Control of Ip can be used to improve the voltage contrast, and this, in turn, can improve the sensitivity of detection.

Paper Details

Date Published: 22 August 2001
PDF: 10 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436736
Show Author Affiliations
Hidetoshi Nishiyama, Hitachi, Ltd. (Japan)
Mari Nozoe, Hitachi, Ltd. (Japan)
Koji Aramaki, Hitachi, Ltd. (Japan)
Osamu Watanabe, Hitachi, Ltd. (Japan)
Yoshihiro Ikeda, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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