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Proceedings Paper

Optical lithography at a 126-nm wavelength
Author(s): Hoyoung Kang; Anatoly Bourov; Bruce W. Smith
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Paper Abstract

There is a window of opportunity for optical lithography between wavelengths of 100 nm and 157 nm that warrants exploration as a next generation technology. We will present activities underway to explore the feasibility of VUV optical lithography in this region with respect to source, optical design, materials, processes, masks, resolution enhancement, and compatibility with existing technologies. We have constructed a small field prototype lithography system using the second continuum 126nm emission wavelength of the Argon excimer. This has been accomplished using a small dielectric barrier discharge lamp with output on the order of 10mW/cm2 and small field catoptric imaging systems based on a modified Cassegrain system. Capacitance focus gauge and piezo electric stage has been installed for fine focusing. In order to achieve sub-half wavelength resolution that would be required to compete with 157nm lithography and others, we have started exploring the feasibility of using liquefied noble gas immersion fluids to increase effective value of lens numerical aperture by factors approaching 1.4x. Conventional silylation process works well with 126nm with high sensitivity. Chemically amplified DUV negative resist looks very good material for 126 nm. Initial contact printing image shows good selectivity and process control. An effort is also underway to explore the use of inorganic resist materials, as silver halide material for instance, to replace the conventional polymeric imaging systems that are currently employed at longer wavelengths, but may be problematic at these VUV wavelengths. Early accomplishments are encouraging. Prototype optical research tools can be used to reveal issues involved with 126nm lithography and solve initial problems. Though many challenges do exist at this short wavelength, it is quite feasible that lithography at this wavelength could meet the part of the needs of future device generations.

Paper Details

Date Published: 20 August 2001
PDF: 5 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436707
Show Author Affiliations
Hoyoung Kang, Rochester Institute of Technology (United States)
Anatoly Bourov, Rochester Institute of Technology (United States)
Bruce W. Smith, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)

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