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Proceedings Paper

Chemically amplified deep UV resists for electron-beam lithography applications
Author(s): Hsuen-Li Chen; Chien-Kui Hsu; Ben-Chang Chen; Fu-Hsiang Ko; Jung-Yen Yang; Tiao-Yuan Huang; Tien-Chi Chu
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Paper Abstract

Chemically amplified resists have been widely used in deep UV optical lithography. In this paper, we characterized positive deep UV resists for high-resolution electron beam lithography applications. Results indicate this deep UV resist is very high sensitive and suitable for high throughput e-beam lithography applications. In general, deep UV resists are not suitable for sub-100 nm resolution lithography, except for strictly process control. After a simple thermal flow procedure, the trench-width can be easily down to 70 nm. It is also convenient to get a sub-70 nm contact hole pattern by utilizing commercial deep UV resists with this strategy. Many factors influence performance or resists such as soft bake, post exposure bake, exposure dose, and thermal flow, which are discussed and optimized. Suitable dry etching properties of deep UV resists are also characterized for pattern transfer.

Paper Details

Date Published: 20 August 2001
PDF: 8 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436705
Show Author Affiliations
Hsuen-Li Chen, National Nano Device Lab. (Taiwan)
Chien-Kui Hsu, National Nano Device Lab. (Taiwan)
Ben-Chang Chen, National Nano Device Lab. (Taiwan)
Fu-Hsiang Ko, National Nano Device Lab. (Taiwan)
Jung-Yen Yang, National Nano Device Lab. (Taiwan)
Tiao-Yuan Huang, National Nano Device Lab. (Taiwan)
Tien-Chi Chu, National Tsing Hua Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)

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