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Proceedings Paper

Feasibility study of EUV scanners
Author(s): Kazuya Ota; Katsuhiko Murakami; Hiroyuki Kondo; Tetsuya Oshino; Katsumi Sugisaki; Hideki Komatsuda
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Paper Abstract

EUV lithography is a successor to DUV/VUV lithography, and is the final photon base lithography technology. The concept of EUV scanners for 50nm node and below is considered by clarifying the similarities and differences between EUV scanners and DUV scanners. Illumination optics, projection optics, wafer alignment sensors and wafer focus sensors are examined. And the throughput model, overlay budget and focus budget are introduced. The concrete design of illumination optics and the requirements for sources are described. Numerical aperture, magnification and field size are discussed. EUV scanners for 50nm node and below are realized.

Paper Details

Date Published: 20 August 2001
PDF: 10 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436704
Show Author Affiliations
Kazuya Ota, Nikon Corp. (Japan)
Katsuhiko Murakami, Nikon Corp. (Japan)
Hiroyuki Kondo, Nikon Corp. (Japan)
Tetsuya Oshino, Nikon Corp. (Japan)
Katsumi Sugisaki, Nikon Corp. (Japan)
Hideki Komatsuda, Nikon Corp. (Japan)

Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)

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