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Proceedings Paper

Tantalum nitride films for the absorber material of refractive-type EUVL mask
Author(s): Masashi Takahashi; Taro Ogawa; Eiichi Hoshino; Hiromasa Hoko; Byoung Taek Lee; Akira Chiba; Hiromasa Yamanashi; Shinji Okazaki
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Paper Abstract

Tantalum nitride (TaxN) films were evaluated for use as the absorber material of masks for extreme ultraviolet lithography (EUVL). TaxN films deposited by DC sputtering using an Ar+N2 gas mixture had a low stress of less than 300 MPa, an amorphous-like structure, and a low deep ultraviolet (DUV) reflectivity. This film provides a DUV contrast of 30% with respect to the Mo/Si multilayer whose top is on Si layer. A TaxN film deposited using a Xe+N2 gas mixture was found to be better in the following ways: the stress was below 100 MPa, the change in stress was below 30 MPa, and the density was more than 1 g/cm3 higher. Furthermore, treating the surface of TaxN film with O2 plasma or sputtering a TaxO film on it using an Ar+O2 gas mixture improved the DUV contrast because the resulting surface has a lower DUV reflectivity than TaxN film. These results indicate that TaxN film is one of the most suitable materials for the absorber of EUVL masks.

Paper Details

Date Published: 20 August 2001
PDF: 11 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436702
Show Author Affiliations
Masashi Takahashi, Association of Super-Advanced Electronics Technologies (Japan)
Taro Ogawa, Association of Super-Advanced Electronics Technologies (Japan)
Eiichi Hoshino, Association of Super-Advanced Electronics Technologies (Japan)
Hiromasa Hoko, Association of Super-Advanced Electronics Technologies (Japan)
Byoung Taek Lee, Association of Super-Advanced Electronics Technologies (Japan)
Akira Chiba, Association of Super-Advanced Electronics Technologies (Japan)
Hiromasa Yamanashi, Association of Super-Advanced Electronics Technologies (Japan)
Shinji Okazaki, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)

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