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Proceedings Paper

Stitching accuracy measurement system for EB direct writing and electron-beam projection lithography (EPL)
Author(s): Takao Tamura; Takahiro Ema; Hiroshi Nozue; Tamoya Sugahara; Akio Sugano; Jun Nitta
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Paper Abstract

We have developed a stitching accuracy measurement system for electron beam (EB) direct writing and electron beam projection lithography (EPL). This system calculates the amount of a stitching error between two EB shots from SEM images. It extracts a representative edge line of each pattern from the graphical format files (BMP, JPEG etc.) of SEM images and calculates a distance between each edge line as a stitching error. For obtaining a higher stitching accuracy of EB direct writing or EPL machines, it can analyze the relation of amounts and direction of a stitching error with a field size or a field position of these machines. We could successfully measure about 2.0 nm as a stitching error value in 0.1 micrometers L/S resist patterns on a bare-Si substrate and obtain 1.2 nm (3(sigma) ) as the measurement repeatability. It took 2.5 sec. for this system to measure one stitching region.

Paper Details

Date Published: 20 August 2001
PDF: 11 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436693
Show Author Affiliations
Takao Tamura, NEC Corp. (Japan)
Takahiro Ema, NEC Corp. (Japan)
Hiroshi Nozue, NEC Corp. (Japan)
Tamoya Sugahara, HOLON Co., Ltd. (Japan)
Akio Sugano, HOLON Co., Ltd. (Japan)
Jun Nitta, HOLON Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)

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