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Proceedings Paper

Progress in placement control for ion beam stencil mask technology
Author(s): Frank-Michael Kamm; Albrecht Ehrmann; Thomas Struck; Karl Kragler; Joerg Butschke; Florian Letzkus; Reinhard Springer; Ernst Haugeneder
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Paper Abstract

Stencil masks, based on 150mm Si-wafers, with large diameter membrane fields have been fabricated for use in an ion projection lithography (IPL) tool. With a current membrane diameter of 126mm, the control of pattern placement is one of the major challenges. As the masks are produced by a wafer flow process, pattern distortions after membrane etch, caused by stiffness changes, have to be controlled. Additionally, stress inhomogenity resulting from SOI wafer blank fabrication, boron implantation and other process steps has to be addressed. These parameters will be discussed on a global and local scale. Results by both, experiments and FE modeling simulations are presented.

Paper Details

Date Published: 20 August 2001
PDF: 6 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436673
Show Author Affiliations
Frank-Michael Kamm, Infineon Technologies AG (Germany)
Albrecht Ehrmann, Infineon Technologies AG (Germany)
Thomas Struck, Infineon Technologies AG (Germany)
Karl Kragler, Infineon Technologies AG (Germany)
Joerg Butschke, Institut fuer Mikroelektronik Chips (Germany)
Florian Letzkus, Institut fuer Mikroelektronik Chips (Germany)
Reinhard Springer, Institut fuer Mikroelektronik Chips (Germany)
Ernst Haugeneder, Ionen Mikrofabrikations Systeme GmbH (Austria)

Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)

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