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Proceedings Paper

Essential reduction of stitching errors in electron-beam lithography using a multiple-exposure technique
Author(s): Ralf Steingrueber; Herbert Engel; Werner Lessle
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Paper Abstract

Electron-beam lithography is the technique of choice to generate in a flexible and accurate way structures and components in the micrometer region and below. Due to its particular exposure strategy, i.e. matching equidistant subfields to a complete pattern, electron-beam systems show typical displacement effects known as stitching errors. These errors can be of dramatic disturbance if they occur in high resolution patterns. This paper presents an exposure scheme which essentially reduces stitching errors by using a multiple exposure technique. The influence of this technique on the value of stitching errors and its interference with the process window as well as total processing time is reported.

Paper Details

Date Published: 20 August 2001
PDF: 6 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436669
Show Author Affiliations
Ralf Steingrueber, Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH (Germany)
Herbert Engel, Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH (Germany)
Werner Lessle, Carl Zeiss (Germany)


Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)

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