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Proceedings Paper

System integration and performance of the EUV engineering test stand
Author(s): Daniel A. Tichenor; Avijit K. Ray-Chaudhuri; William C. Replogle; Richard H. Stulen; Glenn D. Kubiak; Paul D. Rockett; Leonard E. Klebanoff; Karen J. Jefferson; Alvin H. Leung; John B. Wronosky; Layton C. Hale; Henry N. Chapman; John S. Taylor; James A. Folta; Claude Montcalm; Regina Soufli; Eberhard Adolf Spiller; Kenneth L. Blaedel; Gary E. Sommargren; Donald W. Sweeney; Patrick P. Naulleau; Kenneth A. Goldberg; Eric M. Gullikson; Jeffrey Bokor; Phillip J. Batson; David T. Attwood; Keith H. Jackson; Scott Daniel Hector; Charles W. Gwyn; Pei-yang Yan
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Paper Abstract

The Engineering Test Stand (ETS) is a developmental lithography tool designed to demonstrate full-field EUV imaging and provide data for commercial-tool development. In the first phase of integration, currently in progress, the ETS is configured using a developmental projection system, while fabrication of an improved projection system proceeds in parallel. The optics in the second projection system have been fabricated to tighter specifications for improved resolution and reduced flare. The projection system is a 4-mirror, 4x-reduction, ring-field design having a numeral aperture of 0.1, which supports 70 nm resolution at a k1 of 0.52. The illuminator produces 13.4 nm radiation from a laser-produced plasma, directs the radiation onto an arc-shaped field of view, and provides an effective fill factor at the pupil plane of 0.7. The ETS is designed for full-field images in step-and-scan mode using vacuum-compatible, magnetically levitated, scanning stages. This paper describes system performance observed during the first phase of integration, including static resist images of 100 nm isolated and dense features.

Paper Details

Date Published: 20 August 2001
PDF: 19 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436665
Show Author Affiliations
Daniel A. Tichenor, Sandia National Labs. (United States)
Avijit K. Ray-Chaudhuri, Sandia National Labs. (United States)
William C. Replogle, Sandia National Labs. (United States)
Richard H. Stulen, Sandia National Labs. (United States)
Glenn D. Kubiak, Sandia National Labs. (United States)
Paul D. Rockett, Sandia National Labs. (United States)
Leonard E. Klebanoff, Sandia National Labs. (United States)
Karen J. Jefferson, Sandia National Labs. (United States)
Alvin H. Leung, Sandia National Labs. (United States)
John B. Wronosky, Sandia National Labs. (United States)
Layton C. Hale, Lawrence Livermore National Lab. (United States)
Henry N. Chapman, Lawrence Livermore National Lab. (United States)
John S. Taylor, Lawrence Livermore National Lab. (United States)
James A. Folta, Lawrence Livermore National Lab. (United States)
Claude Montcalm, Lawrence Livermore National Lab. (United States)
Regina Soufli, Lawrence Livermore National Lab. (United States)
Eberhard Adolf Spiller, Lawrence Livermore National Lab. (United States)
Kenneth L. Blaedel, Lawrence Livermore National Lab. (United States)
Gary E. Sommargren, Lawrence Livermore National Lab. (United States)
Donald W. Sweeney, Lawrence Livermore National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Eric M. Gullikson, Lawrence Berkeley National Lab. (United States)
Jeffrey Bokor, Lawrence Berkeley National Lab. (United States)
Phillip J. Batson, Lawrence Berkeley National Lab. (United States)
David T. Attwood, Lawrence Berkeley National Lab. (United States)
Keith H. Jackson, Lawrence Berkeley National Lab. (United States)
Scott Daniel Hector, Motorola (United States)
Charles W. Gwyn, Intel Corp. (United States)
Pei-yang Yan, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)

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