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Proceedings Paper

Laser-produced plasma (LPP) scale-up and commercialization
Author(s): Richard H. Moyer; Harry Shields; Armando Martos; Steven W. Fornaca; Randall J. St. Pierre; Michael B. Petach
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Paper Abstract

An EUV light source, created when a high-average power (750 W) Nd:YAG laser forms a plasma in a xenon liquid-spray jet, has been characterized. This source has shown improved conversion from laser to EUV, and a more uniform angular distribution, as the laser pulse energy and average power are increased. System performance has been analyzed and compared with the requirements for future EUV microlithography tools for semiconductor manufacturing. EUV power scaling requirements and factors influencing Cost-of-Ownership are discussed.

Paper Details

Date Published: 20 August 2001
PDF: 6 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436654
Show Author Affiliations
Richard H. Moyer, TRW Space & Electronics Group (United States)
Harry Shields, TRW Space & Electronics Group (United States)
Armando Martos, TRW Space & Electronics Group (United States)
Steven W. Fornaca, TRW Space & Electronics Group (United States)
Randall J. St. Pierre, TRW Space & Electronics Group (United States)
Michael B. Petach, TRW Space & Electronics Group (United States)

Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)

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