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Proceedings Paper

Development of a high-average-power extreme-ultraviolet electric capillary discharge source
Author(s): Neal R. Fornaciari; Howard Bender; Dean Buchenauer; Michael P. Kanouff; Steve Karim; Glenn D. Kubiak; Christopher D. Moen; Gregory M. Shimkaveg; William T. Silfvast; Kenneth D. Stewart
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Paper Abstract

Progress continues on the development of the EUV Electric Capillary Discharge Source. Over the past year we have studied the high average power operational characteristics, used interferometry to measure the in-capillary electron density, and further reduced the debris deposition rate on plasma facing optics. A pulser capable of driving the source at up to 1 kHz was acquired and preliminary testing is in progress. EUV flux and spectral emission measurements were made for pure xenon and xenon-helium mixtures using a new electrode designed to prevent debris from depositing on multilayer optics. Finally, through improvements in capillary and electrode design and material properties coupled with the assistance of mitigation approaches, we have been able to significantly reduce the amount of debris generated by the source thereby increasing the reflectance lifetime of plasma-facing optics.

Paper Details

Date Published: 20 August 2001
PDF: 6 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436652
Show Author Affiliations
Neal R. Fornaciari, Sandia National Labs. (United States)
Howard Bender, Sandia National Labs. (United States)
Dean Buchenauer, Sandia National Labs. (United States)
Michael P. Kanouff, Sandia National Labs. (United States)
Steve Karim, Sandia National Labs. (United States)
Glenn D. Kubiak, Sandia National Labs. (United States)
Christopher D. Moen, Sandia National Labs. (United States)
Gregory M. Shimkaveg, CREOL/Univ. of Central Florida (United States)
William T. Silfvast, CREOL/Univ. of Central Florida (United States)
Kenneth D. Stewart, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)

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