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Proceedings Paper

Dry-etching and nanofabrication technology perspective for novel optical devices/components
Author(s): Kiyoshi Asakawa; Yoshimasa Sugimoto
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Paper Abstract

This paper reviews III-V semiconductor dry etching technologies established in the past decade for miniaturizing and integrating photonic devices/components and nano-fabrication under development for creating novel photonic structures such as photonic crystal and quantum dots. After briefing the technology requirements for DWDM/OTDM-based Terabit optical communication era in 2005- 2010, advancement of the GaAs- and InP-based smooth and high-aspect-ration dry etching with micrometers -size is reviewed with some applications to dry-etched laser diodes and waveguide devices. Secondly, EB nano-lithography and dry etching technologies for 10- to 100-nm-size structures are reviewed for demonstrating photonic crystal. Challenging application to extremely miniaturized waveguide-based planar light wave circuits is included. Lastly, nano-probe assisted processing of arrayed quantum dots as a 10-nm-size structure is discussed. Achievement of suppressed size fluctuation using this technology will prov8de us with a possibility of large optical non-linearity promising for all-optical switching devices in the OTDM optical communication network system.

Paper Details

Date Published: 30 July 2001
PDF: 14 pages
Proc. SPIE 4532, Active and Passive Optical Components for WDM Communication, (30 July 2001); doi: 10.1117/12.436023
Show Author Affiliations
Kiyoshi Asakawa, Femtosecond Technology Research Association (Japan)
Yoshimasa Sugimoto, Femtosecond Technology Research Association (Japan)


Published in SPIE Proceedings Vol. 4532:
Active and Passive Optical Components for WDM Communication
Achyut Kumar Dutta; Abdul Ahad Sami Awwal; Niloy K. Dutta; Katsunari Okamoto, Editor(s)

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