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Proceedings Paper

UV-VIS solid state excimer laser: XeF in crystalline argon
Author(s): Gerald Zerza; F. Knopp; R. Kometer; Gerard Sliwinski; Nikolaus Schwentner
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Paper Abstract

Spatial distributions of photochemically prepared XeF molecules in Ar crystals of 1 cm3 volume are reported for several illumination and annealing conditions and absolute XeF concentrations are derived. Small signal gain coefficients for the C-A (536 nm) transition in addition to the D-X (286 nm), B-X (411 nm) transitions are determined from the XeF concentrations and from measurements of the amplified spontaneous emission intensity versus amplification length and from line narrowing. High gain values of the order of 10 cm-1 are obtained for rather low pump energies. The threshold for laser oscillation and absolute efficiencies are determined.

Paper Details

Date Published: 1 July 1991
PDF: 7 pages
Proc. SPIE 1410, Solid State Lasers II, (1 July 1991); doi: 10.1117/12.43601
Show Author Affiliations
Gerald Zerza, Freie Univ. Berlin (Germany)
F. Knopp, Freie Univ. Berlin (Germany)
R. Kometer, Freie Univ. Berlin (Germany)
Gerard Sliwinski, Freie Univ. Berlin (Germany)
Nikolaus Schwentner, Freie Univ. Berlin (Germany)

Published in SPIE Proceedings Vol. 1410:
Solid State Lasers II
George Dube, Editor(s)

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