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Proceedings Paper

Improved responsivity at the L-band wavelength of a strain-compensated InGaAs multiple quantum well photodiode
Author(s): Toru Uchida; Atsushi Yazaki; Chikashi Anayama; Akira Furuya; Tatsunori Shirai; Masahiro Kobayashi
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Paper Abstract

The absorption layer of a strain-compensated InGaAs multiple quantum well (MQW) was shown to improve the responsivity at the L-band wavelength of a photodiode used in optical fiber communications. The MQW was examined to clarify the range of structural parameters, which are strain and thickness, with which a smooth surface morphology can be obtained. A photodiode with an absorption region of a strain-compensated MQW exhibiting a smooth surface morphology was fabricated, and it was proven to have a high crystalline quality with a low dark current. The MQW absorption region enabled the responsivity of the photodiode to exceed that of a lattice- matched InGaAs photodiode. Carrier transport vertical to the MQW layer was shown to be scarcely affected by the hole trapping caused by band discontinuity.

Paper Details

Date Published: 30 July 2001
PDF: 8 pages
Proc. SPIE 4532, Active and Passive Optical Components for WDM Communication, (30 July 2001); doi: 10.1117/12.436008
Show Author Affiliations
Toru Uchida, Fujitsu Quantum Devices Ltd. (Japan)
Atsushi Yazaki, Fujitsu Quantum Devices Ltd. (Japan)
Chikashi Anayama, Fujitsu Quantum Devices Ltd. (Japan)
Akira Furuya, Fujitsu Quantum Devices Ltd. (Japan)
Tatsunori Shirai, Fujitsu Quantum Devices Ltd. (Japan)
Masahiro Kobayashi, Fujitsu Quantum Devices Ltd. (Japan)


Published in SPIE Proceedings Vol. 4532:
Active and Passive Optical Components for WDM Communication
Achyut Kumar Dutta; Abdul Ahad Sami Awwal; Niloy K. Dutta; Katsunari Okamoto, Editor(s)

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