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Proceedings Paper

Avalanche photodiodes: present and future
Author(s): Takashi Mikawa; Masahiro Kobayashi; Takao Kaneda
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Paper Abstract

The state of the art InP/InGaAs avalanche photodiodes (APDs) and the R and D status of the novel APDs are reviewed. Highly sensitive and reliable 10 Gb/s photo receivers consisted of the conventional InP/InGaAs and InGaP/GaAs heterojunction bipolar transistor ICs are very practical and are now in volume production. The novel APDs reveal high performances such as high-speed and low-noise characteristics, indicating great potential for application to the ultra high-speed transmissions toward 40 Gb/s regime. Very recent study on the strain compensated multiple quantum well APDs aimed at L-band DWDM systems applications over 1.6micrometers wavelength is also introduced.

Paper Details

Date Published: 30 July 2001
PDF: 7 pages
Proc. SPIE 4532, Active and Passive Optical Components for WDM Communication, (30 July 2001); doi: 10.1117/12.436007
Show Author Affiliations
Takashi Mikawa, Fujitsu Quantum Devices Ltd. (Japan)
Masahiro Kobayashi, Fujitsu Quantum Devices Ltd. (Japan)
Takao Kaneda, Fujitsu Quantum Devices Ltd. (Japan)

Published in SPIE Proceedings Vol. 4532:
Active and Passive Optical Components for WDM Communication
Achyut Kumar Dutta; Abdul Ahad Sami Awwal; Niloy K. Dutta; Katsunari Okamoto, Editor(s)

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