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Proceedings Paper

Spectroellipsometric investigation of GaSb surfaces after their chemical wet etching
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Paper Abstract

Procedure of chemical preparation of GaSb and particularly wet etching of GaSb surface is still optimized. Properties of surface layers depend on applied etchant. Spectroscopic ellipsometry (SE) is a very sensitive and allows estimation both thickness and layer stechiometry. Best process, which gives thinnest layer, can be determined directly from spectroscopic ellipsometry measurement. Optical properties of surface GaSb oxide often differ from described by Zolner. To determine thickness and refraction index of thin layers optical model of investigated structure is required. By comparing results of calculations for different models best one was found. Layers thicknesses and approximate refraction indices were determined for the surface layers after different etching.

Paper Details

Date Published: 10 August 2001
PDF: 5 pages
Proc. SPIE 4517, Lightmetry: Metrology, Spectroscopy, and Testing Techniques Using Light, (10 August 2001); doi: 10.1117/12.435964
Show Author Affiliations
Andrzej Kudla, Institute of Electron Technology (Poland)
Ewa Papis-Polakowska, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 4517:
Lightmetry: Metrology, Spectroscopy, and Testing Techniques Using Light
Maksymilian Pluta, Editor(s)

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