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Proceedings Paper

Spectral dependence of the main parameters of ITE silicon avalanche photodiodes
Author(s): Iwona Wegrzecka; Maria Grynglas; Maciej Wegrzecki
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Paper Abstract

New applications for avalanche photodiodes (APDs) as in systems using visible radiation, have prompted the need for the evaluation of detection properties of ITE APDs in the 400 divided by 700 nm spectral range. The paper presents the method and result of studies on the spectral dependence of the gain, dark and noise currents, sensitivity and excess noise factor of ITE APDs. The studies have shown that ITE APDs optimized for the near IR radiation can be effectively applied in the detection of radiation above the 500 nm wavelength.

Paper Details

Date Published: 8 August 2001
PDF: 7 pages
Proc. SPIE 4516, Optoelectronic and Electronic Sensors IV, (8 August 2001); doi: 10.1117/12.435921
Show Author Affiliations
Iwona Wegrzecka, Institute of Electron Technology (Poland)
Maria Grynglas, Institute of Electron Technology (Poland)
Maciej Wegrzecki, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 4516:
Optoelectronic and Electronic Sensors IV
Jerzy Fraczek, Editor(s)

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