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Proceedings Paper

Silicon micromechanical sensors model of piezoresistivity
Author(s): Jan M. Lysko
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Paper Abstract

Application of the piezo resistivity model to estimate valence and conduction bands shifts induced by the mechanical stress is presented. Parameters of the silicon pressure and acceleration sensor, which are under development in the ITE, Warsaw, were used. Geometrical and technological data were used in calculations of the silicon energy band structure and longitudinal coefficient of the piezo resistivity.(pi) L.

Paper Details

Date Published: 8 August 2001
PDF: 9 pages
Proc. SPIE 4516, Optoelectronic and Electronic Sensors IV, (8 August 2001); doi: 10.1117/12.435901
Show Author Affiliations
Jan M. Lysko, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 4516:
Optoelectronic and Electronic Sensors IV
Jerzy Fraczek, Editor(s)

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