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Proceedings Paper

Annealing of GaSb single crystals in ionized hydrogen atmosphere
Author(s): Bedrich Stepanek; Vera Sestakova; Jaroslav Sestak
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Paper Abstract

GaSb undoped wafer were annealed in flowing ionized hydrogen atmosphere at temperature range between 100-350 degrees C for 1-50 hours. The free carrier concentration and resistivity were measured. It was found out that the wafers being treated at a temperature of 150 degrees C for 24 hours reached the resistivity of about 102-103 (Omega) cm and the free carrier concentration was lower than 1 by 1015 cm-3. However, the thickness of the passivated layer was only 0.4-0.6 micrometers .

Paper Details

Date Published: 10 August 2001
PDF: 4 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435865
Show Author Affiliations
Bedrich Stepanek, Institute of Physics (Czech Republic)
Vera Sestakova, Institute of Physics (Czech Republic)
Jaroslav Sestak, Institute of Physics (Czech Republic)


Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals

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