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Proceedings Paper

Growth and dielectric properties of Ca4GdO(BO3)3 single crystals
Author(s): Andrzej Klos; Anna Pajaczkowska; Czeslaw Pawlaczyk; Ewa Markiewicz
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Paper Abstract

Single crystals of Ca4GdO(BO3)3 have ben grown from a melt by the Czochralski puling method making use seed orientation. Defects, like dislocation were investigated. Chemical methods were developed on various planes of crystals, in order to reveal the nature and the distribution of these defects. Dielectric measurements in frequency range 20Hz-13MHz in three main crystallographic directions were carried out. The values of elastic and piezoelectric coefficients were calculated for the first mode of piezoelectric vibration in each direction.

Paper Details

Date Published: 10 August 2001
PDF: 6 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435861
Show Author Affiliations
Andrzej Klos, Institute of Electronic Materials Technology (Poland)
Anna Pajaczkowska, Institute of Electronic Materials Technology (Poland)
Czeslaw Pawlaczyk, Institute of Molecular Physics (Poland)
Ewa Markiewicz, Institute of Molecular Physics (Poland)


Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals

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