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Proceedings Paper

Thermal ionization energy of Mg acceptors in GaN: effects of doping level and compensation
Author(s): Balint Podor
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Paper Abstract

It is shown that the thermal ionization energy of Mg acceptors in GaN, as determined by temperature dependent Hall effect measurements, exhibits the usual dependence on the concentration of ionized impurities, as seen in many other semiconductors. The observed difference in the thermal and optical ionization energies of Mg acceptors can be quantitatively understood based on a simple electrostatic interaction model.

Paper Details

Date Published: 10 August 2001
PDF: 5 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435848
Show Author Affiliations
Balint Podor, Research Institute for Technical Physics and Materials Science (Hungary)


Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals

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