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Proceedings Paper

Semiconductor surface characterization by scanning probe microscopies
Author(s): Michael Hietschold; Anne-D. Mueller; Falk Mueller
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Paper Abstract

Besides the well-known 3D surface topography, scanning probe methods give access to a whole world of local physical information on solid surfaces. Here, we demonstrate opportunities given by scanning tunneling spectroscopy (STS) and scanning electrical force microscopy/spectroscopy. In this paper, we compare the wide-spread UHV-STM/STS technique with ambient SEFM/SEFS. After short description of the methods, some applications to semiconductor surfaces are discussed. Possibly SEFS has a great potential for local electronic spectroscopy in near future.

Paper Details

Date Published: 10 August 2001
PDF: 5 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435824
Show Author Affiliations
Michael Hietschold, Chemnitz Univ. of Technology (Germany)
Anne-D. Mueller, Chemnitz Univ. of Technology (Germany)
Falk Mueller, Chemnitz Univ. of Technology (Germany)


Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals

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