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Proceedings Paper

Crystal lattice dynamics of various silicon-carbide polytypes
Author(s): Stanislaw Nowak
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Paper Abstract

A valence force field model with an added ionic interaction is applied to an explanation of phonon dispersion curves in 6H-SiC. The phonon dispersion curves in 3C-, 2H-, and 4H-SiC are calculated within the same model. Our results are compared with the published result of ab initio calculations. One can suppose that the present model may be applied for other polytypes of SiC. A phonon contribution to Helmholtz energy is determined for the simplest four polytypes. The results indicate a stability of hexagonal polytypes in relation to the cubic one at high temperatures.

Paper Details

Date Published: 10 August 2001
PDF: 6 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435822
Show Author Affiliations
Stanislaw Nowak, Technical Univ. at Radom (Poland)


Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals

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