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Proceedings Paper

Theory of behavior of ionized hydrogen in GaSb crystal structure
Author(s): Vera Sestakova; Bedrich Stepanek; Jaroslav Sestak
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Paper Abstract

Using the thermodynamical studies it seems proved that ionized hydrogen acts as amphoteric dopant of GaSb. It is splitting to H+ and H- and between these two kinds certain equilibrium is created depending on the concentration of acceptor's and donor's impurities in the GaSb material. There is an inclination of such a crystal to maintain the GaSb structure to be iso electric. This behavior has been studied on undoped and slightly Te-doped GaSb single crystal grown by use of the Czochralski method without encapsulant under a flow of ionized hydrogen. For comparison the studies were repeated under a flow of molecular hydrogen.

Paper Details

Date Published: 10 August 2001
PDF: 5 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435817
Show Author Affiliations
Vera Sestakova, Institute of Physics (Czech Republic)
Bedrich Stepanek, Institute of Physics (Czech Republic)
Jaroslav Sestak, Institute of Physics (Czech Republic)


Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals

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