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Proceedings Paper

Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures
Author(s): Irina V. Antonova; Vladimir P. Popov; Jadwiga Bak-Misiuk; J. Domagala; Andrzej Misiuk; V. I. Obodnikov; A. K. Gutakovskii; A. Romano-Rodriguez
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Paper Abstract

Transformation of defects in hydrogen implanted silicon and silicon-on-insulator structures caused by external pressure of argon ambient at the stage of defect removal in implanted material and high temperature annealing SOI structures is reported. The results are compared to these for crystals annealed at argon atmosphere of ambient pressure. Formation of the new phase crystallites was found in SOI structures annealed at high temperature in conditions of high pressure. Small insulations were also observed in hydrogen implanted silicon, which can be patterns of the new phase. Two reasons can cause phase transformation in the top silicon layer of as-bonded SOI structures: high hydrogen concentration and high local strain.

Paper Details

Date Published: 10 August 2001
PDF: 6 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435812
Show Author Affiliations
Irina V. Antonova, Institute of Semiconductor Physics (Russia)
Vladimir P. Popov, Institute of Semiconductor Physics (Russia)
Jadwiga Bak-Misiuk, Institute of Physics (Poland)
J. Domagala, Institute of Physics (Poland)
Andrzej Misiuk, Institute of Electron Technology (Poland)
V. I. Obodnikov, Institute of Semiconductor Physics (Russia)
A. K. Gutakovskii, Institute of Semiconductor Physics (Russia)
A. Romano-Rodriguez, Univ. of Barcelona (Spain)


Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals

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