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Proceedings Paper

Investigation of as-grown nitrogen-doped Czochralski silicon
Author(s): Deren Yang; Jinggang Lu; Yijun Shen; Daxi Tian; Xiangyang Ma; Liben Li; Duanlin Que
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Paper Abstract

Two Czochralski (CZ) silicon ingots, named NCZ and ACZ silicon, were grown under the same procedure in nitrogen and an argon atmosphere respectively. The experiments reveal that nitrogen was doped into the silicon ingot and N-O complexes were generated during the crystal growth, while it was grown in a nitrogen atmosphere. The nitrogen concentration profile in the NCZ silicon ingot indicates that the nitrogen concentration in the wafer edges was less than that in the center. It is also found that the as-grown oxygen-thermal donors were almost the same. Furthermore, it is discovered that the profile of phosphorus concentration in NCZ silicon was also the same as that in ACZ silicon. It is considered that compared with argon atmosphere, nitrogen atmosphere ha no influence on the evaporation rates of phosphorus from melting silicon.

Paper Details

Date Published: 10 August 2001
PDF: 4 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435811
Show Author Affiliations
Deren Yang, Zhejiang Univ. (China)
Jinggang Lu, Zhejiang Univ. (China)
Yijun Shen, Zhejiang Univ. (China)
Daxi Tian, Zhejiang Univ. (China)
Xiangyang Ma, Zhejiang Univ. (China)
Liben Li, Zhejiang Univ. (China)
Duanlin Que, Zhejiang Univ. (China)


Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals

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