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Proceedings Paper

Gate capacitance of MOS field effect devices of nonlinear optical materials in the presence of a parallel magnetic field
Author(s): Kamakhya Prasad Ghatak; Shambhu Nath Biswas; S. N. Banik
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Paper Abstract

This paper studies the effect of a parallel magnetic field on the gate capacitance of MOS field- effect devices of tetragonal type of non-linear optical materials, taking n-Cd3As2 as an example. The expressions of the gate capacitances were derived for the present system for both the weak and the strong electric field-limits respectively. It was found, on the basis of newly derived generalized two-dimensional electron energy spectra by incorporating anisotropic crystal potential to the Hamiltonian together with the anisotropies of the effective electron mass and the spin-orbit splitting of the valence band within the domain of k. p theory, for both the limits, that the gate capacitances increases with increasing surface electric fields in an oscillatory manner. The gate capacitances also exhibit monotonous variations with increasing magnetic fields with different numerical values for both weak and strong field limits respectively. The theoretical results are in agreement with the experimental observation as reported elsewhere. In addition, the corresponding results of the gate capacitances in the absence of parallel magnetic field on the basis of our proposed dispersion law, three-band Kane model and two-band Kane model of MOS field-effect devices of nonlinear optical materials have been obtained.

Paper Details

Date Published: 1 June 1991
PDF: 18 pages
Proc. SPIE 1409, Nonlinear Optics II, (1 June 1991); doi: 10.1117/12.43581
Show Author Affiliations
Kamakhya Prasad Ghatak, Jadavpur Univ. (India)
Shambhu Nath Biswas, Bengal Engineering College (India)
S. N. Banik, Belgachia Monohar Academy (India)

Published in SPIE Proceedings Vol. 1409:
Nonlinear Optics II
Robert A. Fisher; John F. Reintjes, Editor(s)

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