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Proceedings Paper

Investigation of system Si-O (SiOx) behavior in DAC at submegabar pressure
Author(s): Borys M. Efros; Natalya V. Shishkova; Anatolii Prudnikov; Andrzej Misiuk; Jadwiga Bak-Misiuk; Juergen Hartwig
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Paper Abstract

Extensive experiment studies of the IV elements have been made in recent years. Motivations have included the rich variety of phase and structural transitions.

Paper Details

Date Published: 10 August 2001
PDF: 6 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435809
Show Author Affiliations
Borys M. Efros, Physics and Technology Institute (Ukraine)
Natalya V. Shishkova, Physics and Technology Institute (Ukraine)
Anatolii Prudnikov, Physics and Technology Institute (Ukraine)
Andrzej Misiuk, Institute of Electron Technology (Poland)
Jadwiga Bak-Misiuk, Institute of Physics (Poland)
Juergen Hartwig, European Synchrotron Radiation Facility (France)


Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals

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