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Proceedings Paper

Study of material behavior in DAC: system Si-O (SiOx) and compound Fe78Mn20Si2
Author(s): Borys M. Efros; Natalya V. Shishkova; Andrzej Misiuk
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Paper Abstract

For the last ten years or so, the gasketed diamond anvil cell (DAC) has become the standard tool for the generation of high pressures. Compared with the classical hydraulic piston-cylinder devices, a DAC is three to four orders of magnitude less massive, and will generate static pressures one to two orders of magnitude higher than previous devices. In this paper, we attempt to give an understanding of the gasket behavior which will be helpful to the worker requiring routine and reliable use of a DAC in the submegabar pressure range.

Paper Details

Date Published: 10 August 2001
PDF: 6 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435808
Show Author Affiliations
Borys M. Efros, Physics and Technology Institute (Ukraine)
Natalya V. Shishkova, Physics and Technology Institute (Ukraine)
Andrzej Misiuk, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals

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