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Proceedings Paper

Two-dimensional model of the intrinsic point defects behavior during Cz silicon crystal growth
Author(s): Anatolii I. Prostomolotov; Natalia A. Verezub
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Paper Abstract

2D mathematical model of the intrinsic point defects recombination during Cz growth of dislocation-free silicon single crystals is developed. The result of its verification are compared with the data of the 1D model supposing the 'fast' vacancies and interstitial recombination near the liquid-solid interface. For various growth conditions and with use of the calculated 2D temperature fields in Cz silicon crystals the resulting distributions of these intrinsic point defects in a crystal are analyzed.

Paper Details

Date Published: 10 August 2001
PDF: 7 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435807
Show Author Affiliations
Anatolii I. Prostomolotov, Institute for Problems in Mechanics (Russia)
Natalia A. Verezub, Institute for Problems in Mechanics (Russia)


Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals

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