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Proceedings Paper

Effect of high-pressure high-temperature treatment on neutron-irradiation-induced defects in Czochralski silicon
Author(s): Charalambos A. Londos; L. G. Fytros; Andrzej Misiuk; Jadwiga Bak-Misiuk; M. Prujszczyk; M. Potsidou
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Paper Abstract

Czochralski-grown silicon crystals of the same initial oxygen content were subjected to various high temperature- high pressure (HTHP) treatments for different time durations. Subsequently, the crystals were irradiated by fast neutrons at approximately 50 degrees C. One of the main defects form is VO pair usually identified in the IR spectra by the 830 cm-1 localized vibrational model (LVM) band. Upon annealing, this defect is converted to the VO2 defect responsible for a LVM band at 887 cm-1. The purpose of this work is to study the effect of various combinations of HTHP treatment prior to irradiation on the annealing behavior of the VO defect and particularly on its conversion to the VO2 defect. We have concluded that the conversion of VO to VO2 depend on the forms of oxygen impurity and on other defects created in the sample after the HTHP treatment, as for example dislocations and stacking faults.

Paper Details

Date Published: 10 August 2001
PDF: 6 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435806
Show Author Affiliations
Charalambos A. Londos, Univ. of Athens (Greece)
L. G. Fytros, Univ. of Athens (Greece)
Andrzej Misiuk, Institute of Electron Technology (Poland)
Jadwiga Bak-Misiuk, Institute of Physics (Poland)
M. Prujszczyk, Institute of Electron Technology (Poland)
M. Potsidou, Univ. of Athens (Greece)


Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals
Antoni Rogalski; Krzysztof Adamiec; Pawel Madejczyk, Editor(s)

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