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Proceedings Paper

Comparison study on mask error factor in 100-nm ArF and KrF lithography
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Paper Abstract

In this paper, we will discuss feasibility of KrF and ArF technology to overcome 100 nm node. Simulation and experiment for this study were performed in view of mask error factor. Lithography simulation was done by Hyundai OPC Simulation Tool (HOST) based on diffused aerial image model (DAIM). In the case of k1 factor below 0.33, the photolithography process has no margin because of higher MEF value. Therefore, numerical aperture for KrF and ArF need to have over 0.95 and 0.75 respectively for 100 nm node. Actually, it is impossible to make exposure system with 0.95 NA. The mask error factor gave severe influence on the lithographic performance. To overcome 100 nm node, ArF lithography technology is more appropriate than KrF lithography considering MEF concept.

Paper Details

Date Published: 14 September 2001
PDF: 10 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435787
Show Author Affiliations
Tae-Seung Eom, Hyundai Electronics Industries Co., Ltd. (South Korea)
Yoon-Suk Hyun, Hyundai Electronics Industries Co., Ltd. (South Korea)
Cheol-Kyun Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Cheol-Kyu Bok, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Soo Shin, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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