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Proceedings Paper

Reduction of mask error enhancement factor (MEEF) by the optimum exposure dose self-adjusted mask
Author(s): Seiji Matsuura; Takayuki Uchiyama; Takeo Hashimoto
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Paper Abstract

To reduce mask error enhancement factor (MEEF), we have developed the new type half-tone phase shift mask (HTPSM) in which transparent regions are surrounded by opaque rims. We evaluated the imaging performance of contact hole patterns including the MEEF and the depth of focus (DOF). Using this new method, we obtained about 2.0 MEEF and 0.7-micrometers DOF for 180-nm isolated hole, which was much better than that in the conventional mask such as binary mask or HTPSM (the MEEF more than 3). The advantage of our method was that it was possible to attain both the MEEF reduction and the DOF enhancement by the optimization of mask hole size and rim width. Furthermore, we confirmed that this new method was effective not only for improving the exposure dose latitude but also for attenuating side-peak effect.

Paper Details

Date Published: 14 September 2001
PDF: 11 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435783
Show Author Affiliations
Seiji Matsuura, NEC Corp. (Japan)
Takayuki Uchiyama, NEC Corp. (Japan)
Takeo Hashimoto, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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