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Proceedings Paper

High-transmission attenuated PSM as a viable optical extension technique
Author(s): Nishrin Kachwala
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Paper Abstract

Using transmissions higher than 6% some benefits been demonstrated for gate and contact levels with 248nm lithography (Ref. 1,2,3,4). Dense line/space features benefit most from high transmission with conventional illumination and low coherence was demonstrated with tri-tone (Ref.1). This continues the study of benefits with increasing transmission, on contact features. Reticles were manufactured for 248nm Lithography at 6%, 9% and 18% transmissions without the third layer, chrome. Only one dimensional proximity correction was incorporated in the mask design. Extensive mask metrology for CD control, CD linearity, surface quality, Phase and Transmission control across patterned area was carried out to understand the mask infrastructure capability. Simulation projections were verified by imaging analysis. Through pitch Depth of Focus (DOF) and Exposure latitude (EL) data was collected.

Paper Details

Date Published: 14 September 2001
PDF: 11 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435781
Show Author Affiliations
Nishrin Kachwala, International SEMATECH (United States)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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