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Proceedings Paper

Application of attenuated phase-shifting masks to sub-130-nm lithography
Author(s): Chee Kiong Koo; Lay Cheng Choo; Qunying Lin; Shyue Seng Tan; Hui Jun Lee; Siu Chung Tam; Alex K. See
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Paper Abstract

In this paper, the performance of 6% and 18% attenuated phase-shifting masks (PSM) are investigated to assess their capabilities of printing O.12tm and O.lOjim polysilicon gates, using a 248nm scanner with a high NA of 0.68. The effect of off-axis illumination on process enhancement is also investigated. Simulations were done using PROLITHI3D Version 6.1.2. Experimentation was carried out using test masks with various line pitches. The effect of optical proximity correction (OPC) to enhance the overlapping process windows for 0. 12pm and O.1Otm was also studied.

Paper Details

Date Published: 14 September 2001
PDF: 11 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435778
Show Author Affiliations
Chee Kiong Koo, Nanyang Technological Univ. (Singapore)
Lay Cheng Choo, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Qunying Lin, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Shyue Seng Tan, Nanyang Technological Univ. (Singapore)
Hui Jun Lee, Nanyang Technological Univ. (Singapore)
Siu Chung Tam, Nanyang Technological Univ. (Singapore)
Alex K. See, Chartered Semiconductor Manufacturing, Ltd. (Singapore)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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