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Proceedings Paper

Random pattern formation by attenuated non-phase-shift assist pattern mask
Author(s): Shuji Nakao; Akira Tokui; Kouichirou Tsujita; Ichiriou Arimoto; Wataru Wakamiya
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Paper Abstract

A novel resolution enhancement technology (RET) for random pattern formation which utilizes attenuating non-phase-shift (Atten-NPS) assist pattern is proposed based on optical image calculation. By addition of Atten NPS assist pattern whose size is comparable to that of main pattern, much improvement of imaging characteristics is obtained for isolated feature under modified illumination. Modified illumination is optimized both for hole and line pattern. Also, transmission of Atten-NPS aperture is optimized to enhance imaging characteristics and not to be printed on resist. In the application of this RET, aperture size of assist pattern on mask can make similar to that of main pattern. Consequently, difficulty in mask fabrication for conventional assist pattern method , such as pattern delineation and defect inspection, will be overcome.

Paper Details

Date Published: 14 September 2001
PDF: 9 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435777
Show Author Affiliations
Shuji Nakao, Mitsubishi Electric Corp. (Japan)
Akira Tokui, Mitsubishi Electric Corp. (Japan)
Kouichirou Tsujita, Mitsubishi Electric Corp. (Japan)
Ichiriou Arimoto, Mitsubishi Electric Corp. (Japan)
Wataru Wakamiya, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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