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Proceedings Paper

Patterning of random interconnect using double exposure of strong-type PSMs
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Paper Abstract

This paper discusses a new PSM algorithm to generate a pair of sub-mask patterns to achieve 2-D random patterns by double exposure. Test layout was automatically decomposed into two sub-PSMs with about 190 steps of geometrical operations including simple OPCs. Both simulation and experiments showed that 0.28-micrometer pitch random wiring is achieved with our method, suggesting local wiring at 70- (50-) nm node logic LSIs combined with ArF (F2) exposure tools.

Paper Details

Date Published: 14 September 2001
PDF: 8 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435767
Show Author Affiliations
Hiroshi Fukuda, Hitachi, Ltd. (Japan)
Takuya Hagiwara, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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