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Proceedings Paper

Higher-NA ArF scanning exposure tool on new platform for further 100-nm technology node
Author(s): Susumu Mori
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Paper Abstract

The higher numerical aperture ArF scanning exposure tool was developed with completely new platform for further 100nm technology node. This new tool is designed and manufactured with wave front aberration controlled projection lens by using new phase measurement interferometer system, enhanced illuminator structure technology to optimize many various conditions in device production, higher power light source ArF excimer laser and higher speed stages in order to achieve enough required productivity of devices in this node. Not only for the run rate but for the finer accuracy in stage systems and focus control system were involved in this new platform. The actual imaging and accuracy performance will be shown and discussed.

Paper Details

Date Published: 14 September 2001
PDF: 8 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435762
Show Author Affiliations
Susumu Mori, Nikon Corp. (Japan)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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