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Proceedings Paper

Performance results of a new generation of 300-mm lithography systems
Author(s): Boudewijn G. Sluijk; Tom Castenmiller; Richard du Croo de Jongh; Hans Jasper; Theo Modderman; Leon Levasier; Erik Loopstra; Guustaaf Savenije; Marc Boonman; Harry Cox
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Paper Abstract

ASML's recently announced TWINSCAN$TM) lithography platform is specifically designed to meet the specific needs of handling and processing 300 mm substrates. This new platform, already supporting a family of Step & Scan lithography systems for I-line and 248 nm DUV, is designed to further support optical lithography at its limits with systems for 193 nm and 157 nm. The conflicting requirements associated with higher productivity on one side, and more extensive metrology on the other, have led to the development of a platform with two independent wafer stages operating in parallel. The hardware associated with exposure, and the hardware and sub-systems required for metrology, are located in two separate positions. While a wafer is exposed on one stage, wafer unload/load and measurements of the horizontal and vertical wafer maps are done in parallel on the second stage. After the two processes are completed, where the exposure sequence typically is the longest, the two stages are swapped. The process is continued on the second stage, while the first stage unloads the exposed wafer and starts the process again.

Paper Details

Date Published: 14 September 2001
PDF: 14 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435752
Show Author Affiliations
Boudewijn G. Sluijk, ASML (Netherlands)
Tom Castenmiller, ASML (Netherlands)
Richard du Croo de Jongh, ASML (Netherlands)
Hans Jasper, ASML (Netherlands)
Theo Modderman, ASML (Netherlands)
Leon Levasier, ASML (Netherlands)
Erik Loopstra, ASML (Netherlands)
Guustaaf Savenije, ASML (Netherlands)
Marc Boonman, ASML (Netherlands)
Harry Cox, ASML (Netherlands)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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