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Proceedings Paper

Generalized Raman gain in nonparabolic semiconductors under strong magnetic field
Author(s): Kamakhya Prasad Ghatak; Ardhendhu Ghoshal; Badal De
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Paper Abstract

This paper investigates the quantum oscillations of the Raman gain in non-parabolic semiconductors under strong magnetic quantization, taking A3II B2V compounds as examples of nonlinear optical materials. The magneto-dispersion law was formulated in the said material within the framework of k. p formalism taking all types of anisotropies of the energy spectrum. The expression for the Raman gain for the said compound was derived, taking Cd3P2 as an example by including spin and broadening effects. It is found that the Raman gain increases with increasing electron concentration and oscillates with magnetic fields. The numerical values of the gain are greatest for the proposed dispersion relation of A3II B2V type of nonlinear optical materials as compared to wide gap model and the theoretical analysis is in agreement with the experimental observations as reported elsewhere. In addition, the corresponding results for three-band Kane model, two-band Kane model, and parabolic energy bands also have been formulated.

Paper Details

Date Published: 1 June 1991
PDF: 13 pages
Proc. SPIE 1409, Nonlinear Optics II, (1 June 1991); doi: 10.1117/12.43575
Show Author Affiliations
Kamakhya Prasad Ghatak, Jadavpur Univ. (India)
Ardhendhu Ghoshal, Jadavpur Univ. (India)
Badal De, John Brown Inc. (United States)


Published in SPIE Proceedings Vol. 1409:
Nonlinear Optics II
Robert A. Fisher; John F. Reintjes, Editor(s)

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