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Proceedings Paper

Patterning 0.1-um device by using hybrid PSM
Author(s): Chungwei Hsu; Ronfu Chu; Troy Wang; C. C. Liao
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Paper Abstract

Phase shifting mask (PSM) is a method widely known that can enhance optical resolution. Previous work has shown that attenuated PSM with off axis illumination and dark field alternating PSM with double exposure are the two most prominent methods. Both have been shown to print pattern smaller than 0.1 micrometer using KrF. However, using this technique in manufacturing can run into issues on unacceptable overlay error, stronger proximity effect, highly complicated layout, and with much lower wafer printing throughput. In this paper, we introduce a hybrid PSM design and we have characterized the performance by using both simulation and actual wafer data. Our approach is to combine alternating and attenuated PSM into one mask design. For mask making, we have elected to use a high transmission, phase shifting material that coupled with quartz etch process. Several feature types we studied. Of those, poly-gate pattern for both ASIC and DRAM were demonstrated. Data preparation and mask making technology have both been taken into consideration in our analysis. By using this hybrid PSM, sub-0.1 micrometer pattern could be printed with single KrF exposure and with much reduced layout complexity.

Paper Details

Date Published: 14 September 2001
PDF: 11 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435744
Show Author Affiliations
Chungwei Hsu, Nanya Technology Corp. (Taiwan)
Ronfu Chu, Nanya Technology Corp. (Taiwan)
Troy Wang, Nanya Technology Corp. (Taiwan)
C. C. Liao, Nanya Technology Corp. (Taiwan)

Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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