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Proceedings Paper

CD control for two-dimensional features in future technology nodes
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Paper Abstract

A methodology will be presented to use a state-of-the art lithographic simulator to simulate 2D mask patterns and to look at the impact of exposure dose, focus, local reticle CD error and aberrations. This methodology will be applied to a few isolated patterns and a few dense(r) patterns with 1 to 3 aspect ratio line segments. Two line-widths will be simulated with the accompanying illumination condition (130nm with annular and 100nm with quadrupole illumination) with 193nm wavelength and the results will be presented in this paper.

Paper Details

Date Published: 14 September 2001
PDF: 11 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435736
Show Author Affiliations
Staf Verhaegen, IMEC (Belgium)
Ronald L. Gordon, International SEMATECH (United States)
Rik M. Jonckheere, IMEC (Belgium)
Martin McCallum, International SEMATECH (United States)
Kurt G. Ronse, IMEC (Belgium)

Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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