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Proceedings Paper

Impact of acid/quencher behavior on lithography performance
Author(s): Hiroshi Fukuda; Keiko T. Hattori; Takuya Hagiwara
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Paper Abstract

To describe complex acid/quencher interaction and their mutual diffusion in imaging with chemically amplified resist films, our acid-quencher mutual diffusion/quenching model is implemented to the fast resist image simulator. Accuracy better than 10-nm was obtained over wide varieties of 0.13- node metal-level pattern features. The model also suggested that diffusion of quencher, as well as that of acid, significantly degrades proximity effects and MEF.

Paper Details

Date Published: 14 September 2001
PDF: 12 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435732
Show Author Affiliations
Hiroshi Fukuda, Hitachi, Ltd. (Japan)
Keiko T. Hattori, Hitachi, Ltd. (Japan)
Takuya Hagiwara, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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